Original scientific paper
Einstein relation in n-channel inversion layers on ternary semiconductors
Kamakhya P. Ghatak
; Department of Electronics and Telecommunication Engineering, University of Jadavpur, Calcutta-700 032, West Bengal, India
Abstract
An attempt is made to study the Einstein relations for the diffusivity-mobility ratios of the carriers in n-channel inversion layers on ternary semiconductors under both weak and strong electric field limits, taking n-channel inversion layers on Hg1-xCdxTe as an example. It is found, on the basis of the three band Kane model which has been studied in the literature to be the most valid model for bulk specimens of ternary semiconductors that the ratios increase with increasing surface electric fields for both the limits. We have also suggested an experimental method of determining the Einstein relation in degenerate semiconductors having arbitrary dispersion laws. In addition, the corresponding well-known results for isotropic two-band Kane model are also obtained from the expressions derived.
Keywords
Hrčak ID:
331441
URI
Publication date:
5.7.1988.
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