Izvorni znanstveni članak
Photon-Microwave Conversion in Semiconductors by Optical Carrier Control
Masayoshi Tonouchi
Sažetak
The ultrafast carrier dynamics in the optically excited semiconductors is studied by observing the THz radiation. We developed the pump and probe THz beam generation system with variable sample temperature control, and employed it to examine the ultrafast carrier scattering processes. The results proved that the THz beam generation, especially pump and probe method, is a powerful tool to study the ultrafast phenomena. We propose the new model to explain the ultrafast carrier dynamics just after photon arrivals in low-temperature-grown GaAs, which includes the intervalley scattering process.
Ključne riječi
femtosecons laser; terahertz radiation; ultrafast carrier dynamics; low-temperature-grown GaAs; pump and probe terahertz emission
Hrčak ID:
6735
URI
Datum izdavanja:
20.12.2002.
Posjeta: 1.045 *