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Si Nanocrystals Embedded in a Silicon Oxynitride Matrix

Marco Ficcadent ; University of Camerino, School of Science and Technology, Physics Division, Ital
Nicola Pinto ; University of Camerino, School of Science and Technology, Physics Division, Ital
Lorenzo Morresi ; University of Camerino, School of Science and Technology, Physics Division, Ital
Gérald Ferblantier ; InESS–UdS/CNRS, 23, rue du Loess—BP 20 CR, F-67037 Strasbourg Cedex 2, Franc
Marzia Carrad ; InESS–UdS/CNRS, 23, rue du Loess—BP 20 CR, F-67037 Strasbourg Cedex 2, Franc
Abdelillah Slaoui ; InESS–UdS/CNRS, 23, rue du Loess—BP 20 CR, F-67037 Strasbourg Cedex 2, Franc

Sažetak

We investigated the morphological and structural
change in silicon nanostructures embedded in the silicon
oxynitride matrix. The study has been carried out on thin
films thermally annealed at high temperature, after
deposition at 400°C by Electron Cyclotron Resonance
Plasma Enhanced Chemical Vapour Deposition (ECR‐
PECVD), under different deposition parameters.
Our study evidenced the existence of a well defined
threshold for the silicon content in the film (around 47%),
to get Si nano‐crystallization in the silicon oxynitride
matrix. Both Si nano‐crystals and Si nano‐columns have
been observed by TEM analysis in two samples having a
similar Si content but deposited under different
conditions

Ključne riječi

Silicon; nanocrystals; nanocolumns; silicon oxynitride

Hrčak ID:

72507

URI

https://hrcak.srce.hr/72507

Datum izdavanja:

15.9.2011.

Posjeta: 1.115 *