Croatica Chemica Acta, Vol. 85 No. 1, 2012.
Izvorni znanstveni članak
https://doi.org/10.5562/cca1969
Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method
Davor Ristić
; CNR-IFN, Istituto di Fotonica e Nanotecnologie, CSMFO Lab, via alla Cascata 56/C,Povo, 38123, Italy
Mile Ivanda
; Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
Krešimir Furić
; Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
Alessandro Chiasera
; CNR-IFN, Istituto di Fotonica e Nanotecnologie, CSMFO Lab, via alla Cascata 56/C,Povo, 38123, Italy
Enrico Moser
; Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, Povo 38123, Italy
Maurizio Ferrari
; CNR-IFN, Istituto di Fotonica e Nanotecnologie, CSMFO Lab, via alla Cascata 56/C,Povo, 38123, Italy
Sažetak
Silicon-rich oxide (SiOx, 0 < x < 2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570 °C using silane (SiH4) and oxygen as the reactant gasses. The films were annealed at temperatures of 800, 900, 1000, and 1100 °C to induce the separation of excess silicon in the SiOx films into nanosized crystalline silicon particles inside an amorphous SiOx matrix. The size of the silicon particles was determined using Raman spectroscopy. (doi: 10.5562/cca1969)
Ključne riječi
LPCVD; silicon; thermal decomposition; thin films
Hrčak ID:
80417
URI
Datum izdavanja:
30.4.2012.
Posjeta: 2.184 *