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Original scientific paper
https://doi.org/10.5562/cca1969

Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method

Davor Ristić ; CNR-IFN, Istituto di Fotonica e Nanotecnologie, CSMFO Lab, via alla Cascata 56/C,Povo, 38123, Italy
Mile Ivanda ; Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
Krešimir Furić ; Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
Alessandro Chiasera ; CNR-IFN, Istituto di Fotonica e Nanotecnologie, CSMFO Lab, via alla Cascata 56/C,Povo, 38123, Italy
Enrico Moser ; Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, Povo 38123, Italy
Maurizio Ferrari ; CNR-IFN, Istituto di Fotonica e Nanotecnologie, CSMFO Lab, via alla Cascata 56/C,Povo, 38123, Italy

Fulltext: english, pdf (3 MB) pages 91-96 downloads: 648* cite
APA 6th Edition
Ristić, D., Ivanda, M., Furić, K., Chiasera, A., Moser, E. & Ferrari, M. (2012). Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method. Croatica Chemica Acta, 85 (1), 91-96. https://doi.org/10.5562/cca1969
MLA 8th Edition
Ristić, Davor, et al. "Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method." Croatica Chemica Acta, vol. 85, no. 1, 2012, pp. 91-96. https://doi.org/10.5562/cca1969. Accessed 5 Dec. 2019.
Chicago 17th Edition
Ristić, Davor, Mile Ivanda, Krešimir Furić, Alessandro Chiasera, Enrico Moser and Maurizio Ferrari. "Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method." Croatica Chemica Acta 85, no. 1 (2012): 91-96. https://doi.org/10.5562/cca1969
Harvard
Ristić, D., et al. (2012). 'Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method', Croatica Chemica Acta, 85(1), pp. 91-96. https://doi.org/10.5562/cca1969
Vancouver
Ristić D, Ivanda M, Furić K, Chiasera A, Moser E, Ferrari M. Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method. Croatica Chemica Acta [Internet]. 2012 [cited 2019 December 05];85(1):91-96. https://doi.org/10.5562/cca1969
IEEE
D. Ristić, M. Ivanda, K. Furić, A. Chiasera, E. Moser and M. Ferrari, "Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method", Croatica Chemica Acta, vol.85, no. 1, pp. 91-96, 2012. [Online]. https://doi.org/10.5562/cca1969

Abstracts
Silicon-rich oxide (SiOx, 0 < x < 2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570 °C using silane (SiH4) and oxygen as the reactant gasses. The films were annealed at temperatures of 800, 900, 1000, and 1100 °C to induce the separation of excess silicon in the SiOx films into nanosized crystalline silicon particles inside an amorphous SiOx matrix. The size of the silicon particles was determined using Raman spectroscopy. (doi: 10.5562/cca1969)

Keywords
LPCVD; silicon; thermal decomposition; thin films

Hrčak ID: 80417

URI
https://hrcak.srce.hr/80417

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