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Izvorni znanstveni članak
https://doi.org/10.5562/cca1970
Low Temperature Deposition of SiNx Thin Films by the LPCVD Method
Zdenko Tijanić
; Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
Davor Ristić
; Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
Mile Ivanda
; Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
Ivančica Bogdanović-Radović
; Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
Marijan Marciuš
; Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
Mira Ristić
; Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
Ozren Gamulin
; Medical School, Department of Physics and Biophysics, University of Zagreb, Šalata 3b, 10 000, Zagreb, Croatia
Svetozar Musić
; Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
Krešimir Furić
; Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
Alesandro Chiasera
; CNR-IFN, Istituto di Fotonica e Nanotecnologie, CSMFO Lab, via alla Cascata 56/C,Povo, 38123 Trento, Italy
Maurizio Ferrari
; CNR-IFN, Istituto di Fotonica e Nanotecnologie, CSMFO Lab, via alla Cascata 56/C,Povo, 38123 Trento, Italy
Giancarlo Cesare Righini
; MDF Lab, “Nello Carrara” Institute of Applied Physics (IFAC-CNR), Via Madonna del Piano 10, 50019 Sesto Fiorentino, Firenze, Italy
| Puni tekst: engleski, pdf (3 MB) | str. 97-100 | citiraj | |
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APA 6th Edition Tijanić, Z., Ristić, D., Ivanda, M., Bogdanović-Radović, I., Marciuš, M., Ristić, M., ... Righini, G.C. (2012). Low Temperature Deposition of SiNx Thin Films by the LPCVD Method. Croatica Chemica Acta, 85 (1), 97-100. https://doi.org/10.5562/cca1970 MLA 8th Edition Tijanić, Zdenko, et al. "Low Temperature Deposition of SiNx Thin Films by the LPCVD Method." Croatica Chemica Acta, vol. 85, br. 1, 2012, str. 97-100. https://doi.org/10.5562/cca1970. Citirano 18.01.2020. Chicago 17th Edition Tijanić, Zdenko, Davor Ristić, Mile Ivanda, Ivančica Bogdanović-Radović, Marijan Marciuš, Mira Ristić, Ozren Gamulin, et al. "Low Temperature Deposition of SiNx Thin Films by the LPCVD Method." Croatica Chemica Acta 85, br. 1 (2012): 97-100. https://doi.org/10.5562/cca1970 Harvard Tijanić, Z., et al. (2012). 'Low Temperature Deposition of SiNx Thin Films by the LPCVD Method', Croatica Chemica Acta, 85(1), str. 97-100. https://doi.org/10.5562/cca1970 Vancouver Tijanić Z, Ristić D, Ivanda M, Bogdanović-Radović I, Marciuš M, Ristić M i sur. Low Temperature Deposition of SiNx Thin Films by the LPCVD Method. Croatica Chemica Acta [Internet]. 2012 [pristupljeno 18.01.2020.];85(1):97-100. https://doi.org/10.5562/cca1970 IEEE Z. Tijanić, et al., "Low Temperature Deposition of SiNx Thin Films by the LPCVD Method", Croatica Chemica Acta, vol.85, br. 1, str. 97-100, 2012. [Online]. https://doi.org/10.5562/cca1970 |
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Sažetak
Thin silicon rich nitride (SiNx) films were deposited using the LPCVD (Low Pressure Chemical Vapor Deposition) method. Silane diluted in argon and ammonia were used as the reactant gasses, and the low temperature deposition at 570 °C was used. The films were deposited on silicon (111) substrates. Films with the different values of the nitrogen content were deposited by varying the ratio of the flows of ammonia and silane in the horizontal tube reactor. The films were characterized in terms on the surface quality (by scanning electron microscopy), in terms of the nitrogen content x by time of flight elastic recoil detection analysis and by Raman and FTIR spectroscopy. The thickness and dielectric constant were measured by ellipsometry. The films were found to have a very smooth, homogeneous surface with nitrogen content that vary from x = 0 to x = 1 in dependence on the deposition parameters. The intensity of the Si–N stretching peak has shown strong correlation with the film thickness measured by ellipsometry. The films showed a smooth surface layer and the value of dielectric constant easily controllable by the ratio of the flow of the gases in the reactor. (doi: 10.5562/cca1970)
Ključne riječi
silicon nitride; thin film; LPCVD method; Raman; FTIR
Hrčak ID: 80441
URI
https://hrcak.srce.hr/80441
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