Izvorni znanstveni članak

https://doi.org/10.5562/cca1970

Low Temperature Deposition of SiNx Thin Films by the LPCVD Method

Zdenko Tijanić ; Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
Davor Ristić ; Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
Mile Ivanda ; Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
Ivančica Bogdanović-Radović ; Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
Marijan Marciuš ; Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
Mira Ristić ; Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
Ozren Gamulin ; Medical School, Department of Physics and Biophysics, University of Zagreb, Šalata 3b, 10 000, Zagreb, Croatia
Svetozar Musić ; Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
Krešimir Furić ; Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
Alesandro Chiasera ; CNR-IFN, Istituto di Fotonica e Nanotecnologie, CSMFO Lab, via alla Cascata 56/C,Povo, 38123 Trento, Italy
Maurizio Ferrari ; CNR-IFN, Istituto di Fotonica e Nanotecnologie, CSMFO Lab, via alla Cascata 56/C,Povo, 38123 Trento, Italy
Giancarlo Cesare Righini ; MDF Lab, “Nello Carrara” Institute of Applied Physics (IFAC-CNR), Via Madonna del Piano 10, 50019 Sesto Fiorentino, Firenze, Italy

Sažetak

Thin silicon rich nitride (SiNx) films were deposited using the LPCVD (Low Pressure Chemical Vapor Deposition) method. Silane diluted in argon and ammonia were used as the reactant gasses, and the low temperature deposition at 570 °C was used. The films were deposited on silicon (111) substrates. Films with the different values of the nitrogen content were deposited by varying the ratio of the flows of ammonia and silane in the horizontal tube reactor. The films were characterized in terms on the surface quality (by scanning electron microscopy), in terms of the nitrogen content x by time of flight elastic recoil detection analysis and by Raman and FTIR spectroscopy. The thickness and dielectric constant were measured by ellipsometry. The films were found to have a very smooth, homogeneous surface with nitrogen content that vary from x = 0 to x = 1 in dependence on the deposition parameters. The intensity of the Si–N stretching peak has shown strong correlation with the film thickness measured by ellipsometry. The films showed a smooth surface layer and the value of dielectric constant easily controllable by the ratio of the flow of the gases in the reactor. (doi: 10.5562/cca1970)

Ključne riječi

silicon nitride; thin film; LPCVD method; Raman; FTIR

Hrčak ID:

80441

URI

https://hrcak.srce.hr/80441

Datum izdavanja:

30.4.2012.

Posjeta: 3.332 *