Izvorni znanstveni članak
https://doi.org/10.5599/jese.2014.0042
Synthesis of CuInSe2 thin films from electrodeposited Cu11In9 precursors by two-step annealing
Tsung-Wei Chang
; Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C
Shao-Yu Hu
; Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C
Wen-Hsi Lee
; Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C
Sažetak
In this study, copper indium selenide (CIS) films were synthesized from electrodeposited Cu-In-Se precursors by two-step annealing. The agglomeration phenomenon of the electrodeposited In layer usually occurred on the Cu surface. A thermal process was adopted to turn Cu-In precursors into uniform Cu11In9 binary compounds. After deposition of the Se layer, annealing was employed to form chalcopyrite CIS. However, synthesis of CIS from Cu11In9 requires sufficient thermal energy. Annealing temperature and time were investigated to grow high quality CIS film. Various electrodeposition conditions were investigated to achieve the proper atomic ratio of CIS. The properties of the CIS films were characterized by scanning electron microscopy (SEM), X-ray Diffraction (XRD), and Raman spectra.
Ključne riječi
CuInSe2; CIS; annealing; electrodeposition
Hrčak ID:
119472
URI
Datum izdavanja:
25.1.2014.
Posjeta: 1.119 *