Izvorni znanstveni članak

https://doi.org/10.5772/58317

Effect of Dopants on Epitaxial Growth of Silicon Nanowires

Sung Hwan Chung ; School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA
Sarath Ramadurgam ; Department of Physics, Purdue University, West Lafayette, IN, USA
Chen Yang ; Department of Physics, Purdue University, West Lafayette, IN, USA; Department of Physics, Purdue University, West Lafayette, IN, USA

Sažetak

We investigated the effects of dopants on epitaxial growth of Si NWs, with an emphasis on synthesizing vertical epitaxial Si NW arrays on Si (111) substrates. We found that addition of boron with a B:Si feed-in atomic ratio greater than 1:1000 improved the percentage of Si NWs grown along the vertical <111> direction to more than 90%, compared to 38% for i-Si NWs. We also demonstrated a stemmed growth strategy and achieved a 93% percentage of i-Si NW segments along the vertical <111> direction on Si substrates. In summary, our study opens up potential for using chemical synthesized vertical Si NW arrays integrated on Si substrates for large-scale applications.

Ključne riječi

nanowires; epitaxial growth; dopant

Hrčak ID:

142594

URI

https://hrcak.srce.hr/142594

Datum izdavanja:

1.1.2014.

Posjeta: 1.012 *