hrcak mascot   Srce   HID

Izvorni znanstveni članak
https://doi.org/10.5772/58317

Effect of Dopants on Epitaxial Growth of Silicon Nanowires

Sung Hwan Chung ; School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA
Sarath Ramadurgam ; Department of Physics, Purdue University, West Lafayette, IN, USA
Chen Yang ; Department of Physics, Purdue University, West Lafayette, IN, USA; Department of Physics, Purdue University, West Lafayette, IN, USA

Puni tekst: engleski, pdf (6 MB) str. 4-3 preuzimanja: 458* citiraj
APA 6th Edition
Chung, S.H., Ramadurgam, S. i Yang, C. (2014). Effect of Dopants on Epitaxial Growth of Silicon Nanowires. Nanomaterials and Nanotechnology, 4 (Godište 2014), 4-3. https://doi.org/10.5772/58317
MLA 8th Edition
Chung, Sung Hwan, et al. "Effect of Dopants on Epitaxial Growth of Silicon Nanowires." Nanomaterials and Nanotechnology, vol. 4, br. Godište 2014, 2014, str. 4-3. https://doi.org/10.5772/58317. Citirano 27.01.2021.
Chicago 17th Edition
Chung, Sung Hwan, Sarath Ramadurgam i Chen Yang. "Effect of Dopants on Epitaxial Growth of Silicon Nanowires." Nanomaterials and Nanotechnology 4, br. Godište 2014 (2014): 4-3. https://doi.org/10.5772/58317
Harvard
Chung, S.H., Ramadurgam, S., i Yang, C. (2014). 'Effect of Dopants on Epitaxial Growth of Silicon Nanowires', Nanomaterials and Nanotechnology, 4(Godište 2014), str. 4-3. https://doi.org/10.5772/58317
Vancouver
Chung SH, Ramadurgam S, Yang C. Effect of Dopants on Epitaxial Growth of Silicon Nanowires. Nanomaterials and Nanotechnology [Internet]. 2014 [pristupljeno 27.01.2021.];4(Godište 2014):4-3. https://doi.org/10.5772/58317
IEEE
S.H. Chung, S. Ramadurgam i C. Yang, "Effect of Dopants on Epitaxial Growth of Silicon Nanowires", Nanomaterials and Nanotechnology, vol.4, br. Godište 2014, str. 4-3, 2014. [Online]. https://doi.org/10.5772/58317

Sažetak
We investigated the effects of dopants on epitaxial growth of Si NWs, with an emphasis on synthesizing vertical epitaxial Si NW arrays on Si (111) substrates. We found that addition of boron with a B:Si feed-in atomic ratio greater than 1:1000 improved the percentage of Si NWs grown along the vertical <111> direction to more than 90%, compared to 38% for i-Si NWs. We also demonstrated a stemmed growth strategy and achieved a 93% percentage of i-Si NW segments along the vertical <111> direction on Si substrates. In summary, our study opens up potential for using chemical synthesized vertical Si NW arrays integrated on Si substrates for large-scale applications.

Ključne riječi
nanowires; epitaxial growth; dopant

Hrčak ID: 142594

URI
https://hrcak.srce.hr/142594

Posjeta: 597 *