Pregledni rad
Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors
Stephen J. Pearton
orcid.org/0000-0001-6498-1256
; Department of Materials Science and Engineering, University of Florida, Gainesville, FL, USA
Fan Ren
; Department of Chemical Engineering, University of Florida, Gainesville, FL, USA
Sažetak
Wide bandgap semiconductor ZnO, GaN and InN nanowires have displayed the ability to detect many types of gases and biological and chemical species of interest. In this review, we give some recent examples of using these nanowires for applications in pH sensing, glucose detection and hydrogen detection at ppm levels. The wide bandgap materials offer advantages in terms of sensing because of their tolerance to high temperatures, environmental stability and the fact that they are usually piezoelectric. They are also readily integrated with wireless communication circuitry for data transmission.
Ključne riječi
gallium nitride (GaN); zinc oxide (ZnO); indium nitride (InN)
Hrčak ID:
142645
URI
Datum izdavanja:
1.1.2013.
Posjeta: 1.534 *