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Hall Effect of the Al13Fe4 Decagonal Approximant and Its Ternary Extension Al13(Fe,Ni)4
; Laboratory for the Physics of Transport Phenomena, Institute of Physics, Bijenička 46, P. O. Box 304, HR-10001 Zagreb, Croatia
We have measured Hall coefficient and electrical resistivity of the Al13Fe4 and Al13(Fe,Ni)4 monoclinic approximants to the decagonal quasicrystal. While the Al13Fe4 crystals are structurally well ordered, the ternary extension Al13(Fe,Ni)4 contains quenched disorder and can be viewed as a disordered version of Al13Fe4. The crystallographic-direction-dependent Hall effect measurements were performed along the a*, b and c directions of the monoclinic unit cell, where (a*,c) atomic planes are stacked along the perpendicular b direction. The stacking b direction is the most conducting direction for the electricity. The effect of quenched disorder in Al13(Fe,Ni)4 is manifested in the large residual resistivity ρ(T → 0) as compared to the ordered Al13Fe4. The Hall coefficient, RH, values for all combinations of directions, are typical metallic. The anisotropic Hall coefficient reflects complicated structure of the anisotropic Fermi surface that contains electron-like and hole-like parts. Depending on the combination of directions of the current and magnetic field electron-like (RH < 0) or hole-like (RH > 0) contributions may dominate, or the two contributions compensate each other (RH ≈ 0).
Hrčak ID: 52244
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