Original scientific paper
Properties of amorphous and crystalline p-CuInSe2 thin films
Touson A. Hendia
; Solid State Physics Lab., National Research Centre, Dokki, Cairo, Egypt
Hamdia A. Zayed
; ∗University College for Girls, Ain Shams University, Cairo, Egypt
Aziza A. Abo el Soud
; Solid State Physics Lab., National Research Centre, Dokki, Cairo, Egypt
Mohey A. Kenawy
; ∗University College for Girls, Ain Shams University, Cairo, Egypt
Laila I. Soliman
; Solid State Physics Lab., National Research Centre, Dokki, Cairo, Egypt
Abstract
Structural and optical properties of amorphous and crystalline p-CuInSe2 thin films of different thicknesses were studied. The effect of annealing temperature on these properties were investigated. The thin films were prepared by thermal vacuum evaporation of the bulk. The films were investigated by X-ray diffraction and electron microscope technique. The lattice constants for p-CuInSe2 in powder form were found to be a=0.5766 nm and c=1.1329 nm. The optical constants (refractive index n, absorption index k and absorption coefficient a, valence band density of states gi and dielectric constants e', e'') were determined. The analysis of the optical absorption spectra revealed the existence of three optical transition mechanisms: allowed direct transition with Egd1=1.014 eV, forbidden direct transition with Egd2=1.14 eV and indirect transition with Egi=1.082 eV. The optical constants n, k, e', e'' and gi found to depend on the annealing temperature. The d.c. conductivity was measured as a function of the temperature and the data were analysed in order to establish the conduction mechanism in the measured temperature range.
Keywords
Hrčak ID:
299364
URI
Publication date:
1.3.1993.
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