Original scientific paper
Properties of GaAs epitaxial layers grown in water vapour assisted transport process
Szilárd Varga
; Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, P. O. B. 76, H-1325 Hungary
Károly Somogyi
; Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, P. O. B. 76, H-1325 Hungary
Abstract
GaAs homoepitaxial layers have been grown in close-spaced transport conditions. The transport process was activated by the presence of water vapour in hydrogen at temperatures about 730 - 760 °C and 800 - 900 °C. GaAs wafers were used as solid sources. A distance of about 0.3 - 1 mm from the substrate was kept with silica spacers. High growth rates have been reached (up to 2 mm/min) and carrier concentrations at 2 × 1017 and 2 × 1016 cm-3 were found at the above two growth temperatures, respectively. The electron mobilities are relatively low suggesting high compensation rations, typically 0.3-0.5. Photoluminescence spectra show peaks corresponding to complexes formed with participation of peaks corresponding to complexes formed with participation of intrinsic point defects, what is in agreement with the growth rates and electric parameters.
Keywords
Hrčak ID:
299471
URI
Publication date:
2.5.1995.
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