Original scientific paper
EPR study of hydrogen-rich silicon oxynitride films
Branko Pivac
; R. Bošković Institute, P.O. Box 1016, HR-41000 Zagreb, Croatia
Boris Rakvin
; R. Bošković Institute, P.O. Box 1016, HR-41000 Zagreb, Croatia
Alessandro Borghesi
; Dipartimento di Fisica, Universitá degli Studi, I-41100 Modena, Italy
Adele Sassella
; Dipartimento di Fisica Ä. Volta, Universitá degli Studi, I-27100 Pavia, Italy
Abstract
We studied hydrogen rich silicon oxynitrides deposited from nitrous oxide and silane gas mixture by a plasma enhanced chemical vapour deposition apparatus on single crystal silicon substrates. Annealing study showed that hydrogen outdiffusion depends on the film composition and is particularly retarded for oxygen content x = 1.4. EPR analysis demonstrated that this film contains the highest concentration of D centres. However, the maximum concentration of charged dangling bond-like centres does not coincide with D centres. Therefore, we conclude that D centres act as hydrogen traps and are responsible for the peculiar hydrogen behaviour observed in the studied films.
Keywords
Hrčak ID:
299472
URI
Publication date:
2.5.1995.
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