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Fizika A : a journal of experimental and theoretical physics, Vol. 4 No. 2, 1995.

Original scientific paper

Investigation of reactively sputtered NbN films

Ivan Hotovy ; Department of Microelectronics, Slovak Technical University, Ilkovicova 3, 812 19 Bratislava, Slovakia
Jozef Brcka ; Department of Microelectronics, Slovak Technical University, Ilkovicova 3, 812 19 Bratislava, Slovakia
Jozef Huran ; Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska 9, 842 39 Bratislava, Slovakia

Full text: english pdf 241 Kb

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Abstract

We have investigated the structural properties of thin films of reactively magnetron sputtered niobium nitride (NbN) under high-temperature annealing (with annealing temperatures ranging 850 to 950 ° C) and with different nitrogen contents in the working gas mixture. Prepared NbN films were characterized by Auger electron spectroscopy (AES) and X-ray diffraction (XRD). The influence of rapid thermal annealing (RTA) on a change of the structure properties and surface morphology was investigated. The correlation between technological parameters and film properties, structure and composition were established.

Keywords

Hrčak ID:

299488

URI

https://hrcak.srce.hr/299488

Publication date:

2.5.1995.

Article data in other languages: croatian

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