Original scientific paper

Selectively etched series of p-n junctions in GaAs

Károly Somogyi ; Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, P.O.B. 76., H-1325 Hungary
Szilárd Varga ; Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, P.O.B. 76., H-1325 Hungary
Chantal Grattepain ; Laboratoire de Physique des Solides of CNRS, Meudon-Bellevue, 92195 Meudon Cedex, 1. Pl. A. Briand, France
László Dobos ; Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, P.O.B. 76., H-1325 Hungary

Abstract

Simultaneous S and Zn doping was applied to obtain multi-layered vapour phase epitaxial structures of GaAs. SIMS studies have shown that the simultaneous presence of S and Zn in the gas phase does not influence the incorporation of S or of Zn during the growth process. Epitaxial structures with n-p-n-p-n-p-n series of layers have been obtained by variation of S doping at constant Zn partial pressure. The layer thicknesses were 0.3 and 3 mm. SIMS profiles show good abruptness of the junctions, so n-type GaAs lamellae have been obtained by selective electrochemical etching from such layered structures. Results show a possible way for fabrication of micro-machined devices from GaAs.

Keywords

Hrčak ID:

299499

URI

https://hrcak.srce.hr/299499

Publication date:

2.5.1995.

Article data in other languages: croatian

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