Original scientific paper
Ir-Al bimetallic Schottky contact systems on GaAs
Tibor Lalinský
; Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 842 39 Bratislava, Slovakia
Josef Osvald
; Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 842 39 Bratislava, Slovakia
Zelimira Mozolová
; Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 842 39 Bratislava, Slovakia
Josef Šišolak
; Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 842 39 Bratislava, Slovakia
George Constantinidis
; FORTH, Institute of Electronic Structure & Laser, P.O.Box 1527, 711 10 Heraklion, Crete, Greece
Abstract
We report on novel Ir-Al/GaAs Schottky contact systems based on sequentially evaporated Ir-Al bimetallic multilayers. Electrical and thermal stability of these contact systems are investigated by I- V measurements and Auger depth profiling method. An increase of the barrier height with annealing temperature has been indicated for all Schottky contacts. A model of the barrier height enhancement based on a solid phase epitaxy of a graded AlxGa1-xAs layer at the interface at elevated temperatures was used to explain the electrical and the thermal stability of the contacts. A method of controlling of the barrier height and of the thermal stability of the Ir-Al/n-GaAs interface is proposed.
Keywords
Hrčak ID:
299500
URI
Publication date:
2.5.1995.
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