Original scientific paper
Donor binding energy in a parabolic quantum well
N. El-Meshad
; Department of Theoretical Physics, National Research Center, Cairo, Egypt
H. M. Hassanien
; Department of Theoretical Physics, National Research Center, Cairo, Egypt
H. H. Hassan
; Department of Physics, Benha Institute of Technology, Benha, Egypt
Abstract
We solved the impurity problem in a parabolic quantum well. The binding energy of a neutral donor in GaAs-Alx Ga1!xAs parabolic quantum well is determined variationally. For a dopant at the well center, and at the edge of the well in the interface region, the changes in the binding energy of donors are calculated, for different well sizes and depths. The 2s excited state is reported.
Keywords
parabolic quantum well; GaAs-Alx Ga1!xAs; neutral donor; 2s excited state
Hrčak ID:
301096
URI
Publication date:
1.5.2001.
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