Uvodnik
Junction formation and characteristics of n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2 polycrystalline thin films
M. A. Redwan
; University College for Art, Science and Education, Ain Shams University, Cairo, Egypt
L. I. Soliman
; National Research Center, Cairo, Egypt
E. H. Aly
; University College for Art, Science and Education, Ain Shams University, Cairo, Egypt
H. A. Zayed
; University College for Art, Science and Education, Ain Shams University, Cairo, Egypt
Sažetak
CuGa0.3In0.7Se2 polycrystalline thin films were prepared by thermal evaporation under vacuum of about 10-4Pa, with a deposition rate of about 200 nm/min. The selenization of these films at 723 K improves their properties. The activation energy as well as the optical energy gap of the investigated samples decreased with annealing and selenization. Polycrystalline thin film n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2 heterojunctions were fabricated and the current density - voltage and capacitance - voltage characteristics of the junction were studied. The heterojunctions were exposed to light, and under illumination of 1000 mWcm-2, the open circuit voltage was 580 mV, the short circuit current density 4.8 mAcm-2, the fill factor 0.682 and the electrical conversion efficiency was 1.898% for cells of active area of 1 cm2.
Ključne riječi
CuGa0.3In0.7Se2; polycrystalline thin film; n-Cd0.9Zn0.1S/p-CuGa0.3In0.7Se2; heterojunction; solar cell; conversion efficiency
Hrčak ID:
301640
URI
Datum izdavanja:
1.7.2003.
Posjeta: 186 *