Izvorni znanstveni članak
Depolarization crossovers in the microwave response of silicon crystals in slab geometry
Bakir Babić
; ETH Hönggerberg, Institute of Quantum Electronics, CH-8093 Zürich, Switzerland
Mario Basletić
; Department of Physics, Faculty of Science, POB 331, HR-10001 Zagreb, Croatia
ANtonije Dulčić
; Department of Physics, Faculty of Science, POB 331, HR-10001 Zagreb, Croatia
Miroslav Požek
; Department of Physics, Faculty of Science, POB 331, HR-10001 Zagreb, Croatia
Sažetak
Microwave cavity perturbation measurements have been performed on several n-type silicon samples with different depolarization factors due to sample geometries. The general solution for the complex frequency shift in slab geometry is discussed for the specific case of semiconductors. The depolarization crossovers predicted by the theory have been experimentally observed. Their relative intensities suggest that the imaginary part of the complex conductivity of semiconductors has to be taken into account. Electron scattering time has been inferred from the microwave measurements.
Ključne riječi
n-type silicon; slab geometry; microwave measurement; complex frequency shift; depolarization factors; electron scattering time
Hrčak ID:
302053
URI
Datum izdavanja:
1.3.2006.
Posjeta: 154 *