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Electrical and photoelectrical properties of indium selenide

B. Čelustka ; Institute "Ruđer Bošković", Zagreb
A. Peršin ; Institute "Ruđer Bošković", Zagreb
D. Bidjin ; Institute "Ruđer Bošković", Zagreb


Puni tekst: engleski pdf 5.510 Kb

str. 137-143

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Sažetak

Electrical conductivity, photoconductivity and X-ray measurements have been performed on indium selenide single crystals. It bas been shown that the sample preparation procedure has great influence on the measured properties of InSe. The intrinsic energy gap from conductivity measurements was 0.95 eV and from photoconductive spectral response 1.18 eV. From the relaxation of photoconductivity a trapping level (E, = 0.62 eV) for holes was determined.

Ključne riječi

indium selenide; electrical conductivity; photoconductivity

Hrčak ID:

321416

URI

https://hrcak.srce.hr/321416

Datum izdavanja:

1.7.1970.

Podaci na drugim jezicima: hrvatski

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