Izvorni znanstveni članak
Early mechanism of nucleation and growth of thin evaporated film of gallium
Siham Mahmoud
; Physics Department, National Research Centre, Cairo, A. R, B.
Abdel Hamid Eid
; Physics Department, National Research Centre, Cairo, A. R, B.
Sažetak
The processes of nucleation and growth of a very thin film of gallium on carbon and NaCl substrates has been followed. A new technique is employed in preparing a very thin layer < 15 nm. The results of observation and the statistical analysis show that the film goes continuous on NaCl earlier through channel coalescence mechanism. On carbon the drop coalescence was predominant and the film still shows the isolated islands. In higher thickness, the primary, secondary and tertiary nucleations were observed.
Ključne riječi
Hrčak ID:
331130
URI
Datum izdavanja:
2.7.1986.
Posjeta: 434 *