Letter to the Editor

Determination of some performance parameters of MO2S3/Si heterojunctions

Mohamed I. El-Agrab ; Faculty of Education, Ain Shams University, Cairo, Egypt
Ahmed E. Abd El-Rahiem ; Faculty of Science, Zakazik University, Zakazik, Egypt
Gamal M. Youssef ; Faculty of Science, Ain Shams University, Cairo, Egypt
Mamdouh K. El-Mously ; Faculty of Science, Ain Shams University, Cairo, Egypt

Abstract

The I-V characteristics of heterojunction (HJ) formed from thin MO2S3 films and silicon wafers were studied. The measurements were carried out at different temperatures. The performance parameters as series resistance (Rs), activation energy (ΔE) of charge carriers, fili factor (F.F) and output power (Poutput) were calculated for p/p and p/n heterojunctions. It was found that the output power of p/n type improves slightly with further reheating.

Keywords

Hrčak ID:

331804

URI

https://hrcak.srce.hr/331804

Publication date:

8.4.1991.

Article data in other languages: croatian

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