Original scientific paper

Properties of multilayer materials irradiated by high neutron fluences

Daniel Rajniak ; Department of Microelectronics, Faculty of Electrical Engineering and Information Technology, STU, Ilkovičova 3, 812 19 Bratislava, Slovak Republic
Ladislav Harmatha ; Department of Microelectronics, Faculty of Electrical Engineering and Information Technology, STU, Ilkovičova 3, 812 19 Bratislava, Slovak Republic
Milan Ziska ; Department of Microelectronics, Faculty of Electrical Engineering and Information Technology, STU, Ilkovičova 3, 812 19 Bratislava, Slovak Republic
Otto Csabay ; Department of Microelectronics, Faculty of Electrical Engineering and Information Technology, STU, Ilkovičova 3, 812 19 Bratislava, Slovak Republic
Viera Dubravcová ; Department of Microelectronics, Faculty of Electrical Engineering and Information Technology, STU, Ilkovičova 3, 812 19 Bratislava, Slovak Republic

Abstract

Multilayer materials based on silicon were exposed to fast neutrons with fluences ranging from 1015 to 1019 n/cm2. C-V, deep level transient spectroscopy (DLTS) and I-V measurements were carried out to analyse the properties of the respective layers as well as the SiO2-(n-type)silicon and metal-(n-type)silicon interfaces. The detected divacancies and E-centres are likely the main cause of carrier reduction that has been found to depend on the initial doping concentration of the layer. This study has proven that both investigated interfaces exhibit radiation induced interface traps.

Keywords

Hrčak ID:

299469

URI

https://hrcak.srce.hr/299469

Publication date:

2.5.1995.

Article data in other languages: croatian

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