Original scientific paper

Depth profiling by means of total electron yield measurements

Horst Ebel ; Institut für Angewandte und Technische Physik, Technische Universität Wien, Wiedner Hauptstrasse 8-10, A-1040 Wien, Austria
Robert Svagera ; Institut für Angewandte und Technische Physik, Technische Universität Wien, Wiedner Hauptstrasse 8-10, A-1040 Wien, Austria
Roland Kaitna ; Rokappa Laborinstrumente Ges.m.b.H., Krichbaumgasse 31, A-1120 Wien, Austria

Abstract

Total electron yield (TEY) is frequently used for EXAFS measurements. A theoretical correlation of the jump-like increase of TEY in the vicinity of an absorption edge to the composition c and the thickness t of a multicomponent layer allows a quantification of c and t in analogy to XRF. We performed experiments and calculations on thin layers of AlxGa1-xAs on GaAs substrates and confirmed the validity of the theoretical approach in the range 0.2 < x < 0.6 and 20 nm < t < 120 nm. Thus, TEY is an excellent candidate for quantitative surface analysis in the nanometer range.

Keywords

Hrčak ID:

299481

URI

https://hrcak.srce.hr/299481

Publication date:

2.5.1995.

Article data in other languages: croatian

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