Original scientific paper

Properties of vacuum deposited Ag2Se thin layers

Károly Somogyi ; Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, P.O.B. 76., H-1325 Hungary
György Sáfrán ; Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, P.O.B. 76., H-1325 Hungary

Abstract

A recent vacuum deposition method using the topotaxial reaction of Ag and Se allowed us preparation of both epitaxial and polycrystalline Ag2Se layers on NaCl and silica substrates. Low temperature and reproducibility of Ag2Se layers facilitate investigation of this ionic semiconductor. The formation and the reversible phase transition (orthorhombic - cubic) of Ag2Se films are revealed by transmission electron microscopy. Galvanomagnetic properties of 87 nm thick layers with different carrier concentrations were investigated in the temperature range of 77 - 430 K. Properties of poly- and monocrystalline samples are compared. Influence of the phase transformation on the electrical properties are shown.

Keywords

Hrčak ID:

299493

URI

https://hrcak.srce.hr/299493

Publication date:

2.5.1995.

Article data in other languages: croatian

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