Original scientific paper

Some studies on chemically and thermally prepared CuInS2 films

Siham Mahmoud ; Electron Microscope and Thin Film Department, National Research Centre, Cairo, Egypt
Abdel-hamid Eid ; Electron Microscope and Thin Film Department, National Research Centre, Cairo, Egypt

Abstract

Copper indium disulfide (CuInS2) thin films were thermally and chemically prepared, and the structural, optical and electrical properties were investigated. X-ray analysis indicates only single-phase chalcopyrite with no extra planes. The optical and the thermal energy gap was determined. The gap of the annealed thermally-prepared samples in sulfur vapour is greater than of the as-deposited films, which indicates the decrease of d-level contribution to the valence band.

Keywords

Hrčak ID:

299935

URI

https://hrcak.srce.hr/299935

Publication date:

1.10.1997.

Article data in other languages: croatian

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