Original scientific paper
A study of 14-MeV neutron induced defects in p-type germanium
M. Peršin
; Institute "Ruđer Bošković", Zagreb
Abstract
Gallium doped germanium samples with initial room temperature resistivities from 2 to 20 Ωcm were bombarded with 14-MeV neutrons at 77°K. The Hall coefficient and the electrical conductivity were measured as a function of neutron fluence. Initial carrier removal rates were determined for a set samples with different initial hole concentrations, and it was concluded that the limiting Fermi level lies above E_v + 0.06 eV. In isochronal annealing measurements performed from 77°K up to room temperature after irradiations three annealing stages were found: the first between 80° and 160° , the second between 160° and 260°K, and the third above 260°K. The first stage was attributed to certain rearrangements of defects resulting in the increase of the number of donor center in the gap. The second annealing stage can be connected with cluster dissociation and vacancy migration. The third stage shows no change either in hole concentration or in mobility.
Keywords
Hrčak ID:
319315
URI
Publication date:
3.4.1968.
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