Original scientific paper
Memory-switching effect in single crystals of indum selenide (InSe)
M. Peršin
; Institute "Ruđer Bošković", Zagreb
B. Čelustka
; Institute "Ruđer Bošković", Zagreb
Abstract
It has been found that layered single crystals of indium selenide with a he-, xagonal crystal structure exhibit bistable or memory switching with the current along their c-axis when the applied electric field exceeds about 1 · 104 V /cm. Current-voltage d. c. characteristics measured with a constant current power supply reveal the negative differential resistance region followed by a rapid increase of current and a strong rise in temperature which precede the transition from the high resistivity or OFF state to the low resistivity or ON state of the sample. The resistance ratio (ROFF/RON) for this transition is of the order of 103 . The OFF state can be restored by applying a sufficiently high current pulse or by a sudden decrease of the ON-state current from a sufficiently high value (10 mA or higher) to the zero value. It is assumed that the applied high electric field leads to local reordering of atoms along a path between the electrodes and parallel to the c-axis, and to the creation of a high-conductive "bridge" responsible for the ON state. The rupture of the conductive "bridge" as a result of Joule heating at sufficiently high temperature followed by rapid cooling brings the sample again to the high-resistivity state.
Keywords
Hrčak ID:
322941
URI
Publication date:
6.1.1976.
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