Izvorni znanstveni članak
Intrinsic point defects in polycrystalline silicon
Branko Pivac
; R. Bošković Institute, P. O. Box 180, HR-10002 Zagreb, Croatia
Vesna Borjanović
; Faculty of Electrical Engineering and Computing, Unska 3, HR-10000 Zagreb, Croatia
Ivana Kovačević
; R. Bošković Institute, P. O. Box 180, HR-10002 Zagreb, Croatia
Sažetak
The behaviour of intrinsic point defects in silicon is still an unresolved problem. As they interact with other impurities and influence their diffusion, intrinsic point defects affect electronic properties of the material. Of particular importance is the intrinsic point defect behaviour in polycrystalline silicon due to the presence of very high concentration of structural defects, such as dislocations and grain boundaries of various kinds. A direct observation of point defects is very difficult and therefore it is shown that monitoring of carbon concentration is a very good measure of point defects behaviour. Polycrystalline material supersaturated with carbon represents a particular case when self-interstitials and vacancy generation is significantly retarded up to the highest temperatures, leading therefore to the preservation of carbon supersaturation upon thermal treatments.
Ključne riječi
polycrystalline silicon; intrinsic point defects; interaction with other impurities; electronic properties; upersaturation with carbon
Hrčak ID:
301056
URI
Datum izdavanja:
2.4.2000.
Posjeta: 192 *