Letter to the Editor

On the electronic contribution to elastic constants of ultrathin films of p-type Si

Kamakhya Prasad Ghatak ; Department of Electronics and Telecommunication Engineering, University of Jadavpur, Calcutta-700 032, India
Badal De ; Department of Electrical Engineering, John Brown E and Cinc., 333 Udlow Street, P. O. Box 1422, Connecticut-0690, USA

Abstract

In this paper we have formulated the electronic contribution to the elastic constants in ultrathin films of p-Si by considering the influence of heavy, light and split-off holes, respectively. We have suggested an experimental method of determining the same in degenerate materials having arbitrary dispersion laws. The elastic constants increase with increasing hole concentration in an oscillatory way and decrease with increasing film thickness.

Keywords

Hrčak ID:

332046

URI

https://hrcak.srce.hr/332046

Publication date:

2.12.1991.

Article data in other languages: croatian

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