Meeting abstract
The surface recombination and reflection influence on quantum efficiency of photovoltaic devices
Zoran Djurić
; Institute for Chemistry, Technology and Metallurgy, Institute for Microelectronic Technologies and Single Crystals, 11000 Beograd, Njegoševa 12, Yugoslavia
Zoran Jakšić
; Institute for Chemistry, Technology and Metallurgy, Institute for Microelectronic Technologies and Single Crystals, 11000 Beograd, Njegoševa 12, Yugoslavia
Abstract
A new procedure is proposed for the evaluation of the basic parameters of photovoltaic structures, which takes into account the back side reflection and corresponding surface recombination rate. The device response is calculated from the continuity equation¹. Using the generation term which takes into account the reflection both from the front and from the back side of photovoltaic structure², modified expressions for the carrier concentration and current are obtained; using these, the quantum efficiency is determined. Its values, calculated in this way, differ from the ones obtained in the usual way, especially near the absorption edge. The applied technique enables a simple theoretical prediction of the basic parameters of photovoltaic structure.
Keywords
Hrčak ID:
339893
URI
Publication date:
20.12.1989.
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