Meeting abstract

The potential distribution in very thin GaAs heterojunctions

V. Milanović ; High PTT School, Zdravka Čelara 16, Beograd
D. Tjapkin ; Faculty of Electrical Engineering, Bulevar Revolucije 73, Beograd, Institute of Physics, Studentski trg 12/V, Beograd, Yugoslavia

Abstract

Since the electric field at GaAs–AlₓGa₁₋ₓAs interface is quite large electrons are confined within deep potential wells besides each surface. The analysis of this structure involves the self-consistent solution of the Schrödinger and Poisson equation determining the energies and the wave functions of electrons, the concentration, as well as the potential distribution depending on the temperature, surface electron densities and on the GaAs layer thickness. The results obtained were compared with the results obtained by the model of infinite rectangular well and by the self-consistent solution of the Schrödinger and Poisson equation.

Keywords

Hrčak ID:

340694

URI

https://hrcak.srce.hr/340694

Publication date:

15.12.1980.

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