Meeting abstract

Microdefects in quenched Czochralski-grown Si crystals

D. Kostoski ; Boris Kidrič Institute of Nuclear Sciences, Belgrade, Yugoslavia
M. Stojić ; Boris Kidrič Institute of Nuclear Sciences, Belgrade, Yugoslavia
V. Spirić ; Boris Kidrič Institute of Nuclear Sciences, Belgrade, Yugoslavia
F. Phillipp ; Max-Planck Institut für Metallforschung, Institut für Physik, Stuttgart, Germany

Abstract

Optical microscopy/etch pit techniques and TEM have been used to characterize microdefects in Czochralski-grown silicon crystals after quenching from 1100 °C to room temperature. The defect population is complex and consists of precipitates and rod-like defects surrounded by subsidiary precipitates. The role that oxygen may play in the formation of precipitates and rod-like defects is discussed.

Keywords

Hrčak ID:

340699

URI

https://hrcak.srce.hr/340699

Publication date:

15.12.1980.

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