Original scientific paper
Concentration profiles of elements and structure of a-Si1-xNx:H films
Vitaliy Gerasimov
; Uzhgorod State University, Department of Solid-State Electronics, 294000 Uzhgorod, 32 Voloshyn str., Ukraine
Vladimir Mitsa
; Uzhgorod State University, Department of Solid-State Electronics, 294000 Uzhgorod, 32 Voloshyn str., Ukraine
Abstract
SIMS profiles of a-Si1-xNx:H films having different composition have been measured. The distribution of hydrogen in nitrided films bears a fluctuating character and its whole content decreases at x < 0.06. In all films, Na impurity is observed and its content on the film surface exceeds that of all other components. In the region of small contents of nitrogen, the position of the absorption edge in a-Si1-xNx:H films does not change with respect to its position in a-Si:H. According to the analysis of IR spectra of a-Si1-xNx:H near Si-N bonds, different surroundings are realized.
Keywords
Hrčak ID:
299842
URI
Publication date:
1.6.1997.
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