Original scientific paper
CdTe hole lifetime from the gamma-ray and photo-induced effects
U. V. Desnica
; Institute ,"Ruđer Bošković", Zagreb
N. B. Urli
; Institute ,"Ruđer Bošković", Zagreb
Abstract
Two independent methods, the gamma-ray induced photovoltaic effect and the monochromatic light induced photoeffect, were used for determination of the minority carrier lifetime in indium doped n-type CdTe. The existing expressions for collection efficiency of electron-hole pairs generated by visible light near the p-n junction were extended to include a contribution of the depletion layer. P-n junctions formed by electroless plating of gold had a relatively high capacitance associated with a very narrow depletion region. The short-circuit current of the diodes was measured during irradiation in the Co60 gamma source. The values of lifetime of holes in CdTe (of the order of 5 *10-10 s), obtained by the two methods, were in agreement within the limits of experimental errors.
Keywords
Hrčak ID:
321597
URI
Publication date:
8.11.1971.
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