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Silicon surface irradiated by nitrogen laser radiation
Višnja Henč-Bartolić
; Dept. of Applied Physics, Faculty of Electrical Engineering and Computing, University of Zagreb, Unska 3, HR-10000 Zagreb, Croatia
Željko Andreić
; Laboratory for Ionized Gases, Division for Material Research and Electronics, Dept. of Physics, Rudjer Bošković Institute, Bijenička 54, HR-10000 Zagreb, Croatia
Davor Gracin
; Laboratory for Ionized Gases, Division for Material Research and Electronics, Dept. of Physics, Rudjer Bošković Institute, Bijenička 54, HR-10000 Zagreb, Croatia
Hans-Joachim Kunze
; Ruhr-Universität Bochum, Fakultät für Physik und Astronomie, Institut für Experimentalphysik V, D-44780 Bochum, Germany
Mirko Stubičar
; Dept. of Physics, Faculty of Science, University of Zagreb, Bijenička 32, HR-10000 Zagreb, Croatia
Sažetak
Monocrystalline silicon target was irradiated with a nitrogen laser beam (λ = 337 nm, maximum energy density 1.1 J/cm2, pulse duration 6 ns and repetition rate 0.2 Hz). The plasma formed at the silicon surface was observed spetroscopically in air (ne = 3×1018 cm-3, Te = 18 500 K) and in vacuum (ne = 6.5×1017 cm-3, Te = 16 000 K). The irradiated surface in vacuum was studied by a metallographic microscope. Droplets were created at crater edges. Their formation is explained by the hydrodynamical sputtering model.
Ključne riječi
Hrčak ID:
299846
URI
Datum izdavanja:
1.6.1997.
Posjeta: 500 *