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Silicon surface irradiated by nitrogen laser radiation

Višnja Henč-Bartolić ; Dept. of Applied Physics, Faculty of Electrical Engineering and Computing, University of Zagreb, Unska 3, HR-10000 Zagreb, Croatia
Željko Andreić ; Laboratory for Ionized Gases, Division for Material Research and Electronics, Dept. of Physics, Rudjer Bošković Institute, Bijenička 54, HR-10000 Zagreb, Croatia
Davor Gracin ; Laboratory for Ionized Gases, Division for Material Research and Electronics, Dept. of Physics, Rudjer Bošković Institute, Bijenička 54, HR-10000 Zagreb, Croatia
Hans-Joachim Kunze ; Ruhr-Universität Bochum, Fakultät für Physik und Astronomie, Institut für Experimentalphysik V, D-44780 Bochum, Germany
Mirko Stubičar ; Dept. of Physics, Faculty of Science, University of Zagreb, Bijenička 32, HR-10000 Zagreb, Croatia


Puni tekst: engleski pdf 230 Kb

str. 97-102

preuzimanja: 77

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Sažetak

Monocrystalline silicon target was irradiated with a nitrogen laser beam (λ = 337 nm, maximum energy density 1.1 J/cm2, pulse duration 6 ns and repetition rate 0.2 Hz). The plasma formed at the silicon surface was observed spetroscopically in air (ne = 3×1018 cm-3, Te = 18 500 K) and in vacuum (ne = 6.5×1017 cm-3, Te = 16 000 K). The irradiated surface in vacuum was studied by a metallographic microscope. Droplets were created at crater edges. Their formation is explained by the hydrodynamical sputtering model.

Ključne riječi

Hrčak ID:

299846

URI

https://hrcak.srce.hr/299846

Datum izdavanja:

1.6.1997.

Podaci na drugim jezicima: hrvatski

Posjeta: 573 *