Original scientific paper

Effect of magnetic quantization on the Einstein relation in n-channel inversion layers on kane-type semiconductors

Kamakhya Prasad Ghatak ; Centre of Advanced Study in Radio Physics and Electronics, Girish Vidyaratna Lane, Calcutta-700009, India
Nalinaksha Chaitopadhyay ; Department of Physics, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, Calcutta-700009, India
Manabendra Mondal ; Department of Physics, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, Calcutta-700009, India

Abstract

An attempt is made to derive a generalized expression for the Einstein relation of the diffusivity-mobility ratio of the carriers in n-channel inversion layers on Kane¬-type semiconductors under magnetic quantization by using the three-band Kane model. Besides, the oscillatory dependence of the same ratio on reciprocal magnetic field has also been theoretically investigated taking n-channel InAs as an example.

Keywords

Hrčak ID:

331155

URI

https://hrcak.srce.hr/331155

Publication date:

2.2.1987.

Article data in other languages: croatian

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