Izvorni znanstveni članak
Effect of magnetic quantization on the Einstein relation in n-channel inversion layers on kane-type semiconductors
Kamakhya Prasad Ghatak
; Centre of Advanced Study in Radio Physics and Electronics, Girish Vidyaratna Lane, Calcutta-700009, India
Nalinaksha Chaitopadhyay
; Department of Physics, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, Calcutta-700009, India
Manabendra Mondal
; Department of Physics, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, Calcutta-700009, India
Sažetak
An attempt is made to derive a generalized expression for the Einstein relation of the diffusivity-mobility ratio of the carriers in n-channel inversion layers on Kane¬-type semiconductors under magnetic quantization by using the three-band Kane model. Besides, the oscillatory dependence of the same ratio on reciprocal magnetic field has also been theoretically investigated taking n-channel InAs as an example.
Ključne riječi
Hrčak ID:
331155
URI
Datum izdavanja:
2.2.1987.
Posjeta: 511 *