Meeting abstract
Determination of the energy level of the two-dimensional electron gas in the junction field effect transistor by a variational calculus
V. B. Milanović
; High PTT School, Zdravka Čelara 16, Beograd
M. D. Mitrinović
; Faculty of Electrical Engineering, Beograd, Bulevar Revolucije 73, Faculty of Technology and Metallurgy, Beograd, Institute of Physics, Beograd, Studentski trg 12/V, Yugoslavia
Abstract
During the last ten years the influence of quantum effects has been studied intensively theoretically and experimentally in the cases of strong inversion and accumulation in the MOSFET transistors. Only few papers were devoted to this problem for the case of the transistor with p–n junction based field effect (JFET).
The assumed wave function ψ(z̄) (the z-axis is normal to the direction of the source–drain) in the channel has the form: ψ(z̄)=const(z̄²–α²) where n is a natural number (n ≥ 2) and α the variational parameter.
Comparing the basic energy levels obtained through the variational calculus with those obtained by means of the exact self-consistent solution of the Schrödinger and Poisson equation (1), the possibility of applying the variational method depending on the channel width Wₖ and parameter nᵥ was discussed. It was shown that the variational method yields more accurate results at smaller nᵥ, while the error increases fast at greater Wₖ.
Keywords
Hrčak ID:
340692
URI
Publication date:
15.12.1980.
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