Original scientific paper

Elastic reflection spectra on porous p-TYPE silicon layer (PSL) surface

Christine Robert ; LASMEA, Universite Blaise-Pascal de Clermont-Ferrand. F-63177 Aubiere, France
Bernard Gruzza ; LASMEA, Universite Blaise-Pascal de Clermont-Ferrand. F-63177 Aubiere, France
Luc Bideux ; LASMEA, Universite Blaise-Pascal de Clermont-Ferrand. F-63177 Aubiere, France
György Gergely ; Res. Inst. Technical Physics, Hung. Acad. Sci., H-1325 Budapest, POB 76, Hungary
Miklós Menyhárd ; Res. Inst. Technical Physics, Hung. Acad. Sci., H-1325 Budapest, POB 76, Hungary
Éva Vázsonyi ; KFKI Mat. Res. Inst., Hung. Acad. Sci. H-1525 POB 49, Hungary

Abstract

PSL samples have been formed on p type Si(100) wafers by an electrochemical procedure. The dependence of the elastic electron reflection coefficient, re(E), on porosity (P) was determined by elastic peak electron spectroscopy (EPES). The spectra were measured in absolute units (%) with a retarding field analyser and spectrometer corrections. They exhibited systematic decrease of intensity with porosity. HF treatment of samples produced a dramatic decrease of re(E) in the low energy (40-100 eV) range, due to removal of the native SiO2 and formation of Si-H bonds on the surface. It can be explained by multiple elastic reflection and attenuation of electrons by H adatoms on the pore walls. The constribution of pores to re(E) was considerable and increasing with porosity. The porous layers and interfaces have been studied by Auger electron spectroscopy (AES) with Ar+ ion bombardment depth profiling of high resolution.

Keywords

Hrčak ID:

299496

URI

https://hrcak.srce.hr/299496

Publication date:

2.5.1995.

Article data in other languages: croatian

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