Original scientific paper
Carrier traps in graded InGaAs photodiodes with high Indium content
Natko B. Urli
; Ruđer Bošković Institute, POB 1016, 10001 Zagreb, Croatia
Vladimir S. Ban
; Photodiode-Laserdiode, Inc., Princeton, NJ 08540, U.S.A.
Abstract
Carrier traps in In0.82Ga0.18As, introduced during manufacturing of photodiodes by vapour phase epitaxy (VPE), have been studied by electrical measurements. Two groups of localized energy levels associated with traps were found in photodiodes annealed at higher temperature after fabrication: the first, at Ec- 0.14 eV, and the second located deeper, close to the middle of the energy gap. Electrically activated dislocations by association with some impurities are responsible for the occurrence of the deeper levels.
Keywords
Hrčak ID:
299563
URI
Publication date:
1.9.1995.
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