Original scientific paper

Physical properties of d-Bi2O3thin films

Hamdia A. Zayed ; University College for Girls, Ain Shams University, Cairo, Egypt

Abstract

Polycrystalline thin films of δ–Bi2O3 were prepared by oxidising bismuth films of thickness (120–350 nm) in air at 473 K for 10 hours. X–ray diffraction analysis showed that the films are polycrystalline and correspond to cubic δ–phase of Bi2O3. The electrical and optical properties of δ–Bi2O3 were studied. The effect of the film thickness on these properties was also investigated. From the electrical conductivity measurements at various temperatures (100–473 K), the coexistence of band and multiphonon–assisted hopping conduction between well–localized states has been observed. It was found also that the activation energy ∆E increases and the density of localized states at the Fermi level gr decreases with increasing thickness of the film. The analysis of the absorption coefficient data revealed the existence of an indirect transition. It was found that the calculated value of the optical energy gap Eopt
g increases with increasing thickness of the film.

Keywords

Hrčak ID:

299440

URI

https://hrcak.srce.hr/299440

Publication date:

1.3.1995.

Article data in other languages: croatian

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