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https://doi.org/10.5562/cca1969

Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method

Davor Ristić ; CNR-IFN, Istituto di Fotonica e Nanotecnologie, CSMFO Lab, via alla Cascata 56/C,Povo, 38123, Italy
Mile Ivanda ; Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
Krešimir Furić ; Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
Alessandro Chiasera ; CNR-IFN, Istituto di Fotonica e Nanotecnologie, CSMFO Lab, via alla Cascata 56/C,Povo, 38123, Italy
Enrico Moser ; Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, Povo 38123, Italy
Maurizio Ferrari ; CNR-IFN, Istituto di Fotonica e Nanotecnologie, CSMFO Lab, via alla Cascata 56/C,Povo, 38123, Italy

Sažetak

Silicon-rich oxide (SiOx, 0 < x < 2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570 °C using silane (SiH4) and oxygen as the reactant gasses. The films were annealed at temperatures of 800, 900, 1000, and 1100 °C to induce the separation of excess silicon in the SiOx films into nanosized crystalline silicon particles inside an amorphous SiOx matrix. The size of the silicon particles was determined using Raman spectroscopy. (doi: 10.5562/cca1969)

Ključne riječi

LPCVD; silicon; thermal decomposition; thin films

Hrčak ID:

80417

URI

https://hrcak.srce.hr/80417

Datum izdavanja:

30.4.2012.

Posjeta: 2.581 *