Izvorni znanstveni članak
https://doi.org/10.7305/automatika.53-2.177
Wide Band Gap Semiconductor Devices for Power Electronics
José Millán
; Centro Nacional de Microelectrónica, CNM, Instituto de Microelectrónica de Barcelona, IMB, CSIC, Campus UAB, Spain
Philippe Godignon
; Centro Nacional de Microelectrónica, CNM, Instituto de Microelectrónica de Barcelona, IMB, CSIC, Campus UAB, Spain
Amador Pérez-Tomás
; Centro Nacional de Microelectrónica, CNM, Instituto de Microelectrónica de Barcelona, IMB, CSIC, Campus UAB, Spain
Sažetak
It is worldwide accepted today that a real breakthrough in the Power Electronics field may mainly come from the development and use of Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high-switching speed, high-voltage and high-temperature. These unique performances provide a qualitative change in their application to energy processing. From energy generation (carbon, oil, gas or any renewable) to the end-user (domestic, transport, industry, etc), the electric energy undergoes a number of conversions. These conversions are currently highly inefficient to the point that it is estimated that only 20% of the whole energy involved in energy generation reaches the end-user. WGB semiconductors increase the conversion efficiency thanks to their outstanding material properties. The recent progress in the development of high-voltage WBG power semiconductor devices, especially SiC and GaN, is reviewed. The performances of various rectifiers and switches, already demonstrated are also discussed. Material and process technologies of these WBG semiconductor devices are also tackled. Future trends in device development and industrialization are also addressed.
Ključne riječi
SiC; GaN; Power devices; Rectifiers; MOSFETs; HEMTs
Hrčak ID:
84008
URI
Datum izdavanja:
1.6.2012.
Posjeta: 10.218 *