Izvorni znanstveni članak
Effect of electron-irradiation on electron-beam evaporated GaAs films
Wafeya Z. Soliman
; Physics Department, National Research Centre, Dokki, Cairo, Egypt
Sažetak
Transmission electron microscopy and diffraction investigations showed that gallium arsenide films, deposited on amorphous substrates by electron-beam evaporation, are polycrystalline consisting of extremely fine grains. During TEM examination the GaAs films decompose into Ga and As, as revealed from the analysis of electron diffraction patterns. The decomposition is attributed to the combined effect of the ionization and thermal effect of the electron beam.
Ključne riječi
Hrčak ID:
299306
URI
Datum izdavanja:
1.4.1992.
Posjeta: 197 *