Izvorni znanstveni članak

Dry and wet etching of AIIIBV materials for optoelectronics devices

Jozef Brcka ; Microelectronics Department, FEI STU Ilkovičova 3, 81219 Bratislava, Slovakia
Aleksander Satka ; Microelectronics Department, FEI STU Ilkovičova 3, 81219 Bratislava, Slovakia
Jaroslava Skriniarová ; Microelectronics Department, FEI STU Ilkovičova 3, 81219 Bratislava, Slovakia
Vladimir Tvarozek ; Microelectronics Department, FEI STU Ilkovičova 3, 81219 Bratislava, Slovakia
Peter Vronský ; Microelectronics Department, FEI STU Ilkovičova 3, 81219 Bratislava, Slovakia

Sažetak

Several AIIIBV materials (InP, GaAs, AlGaAs) were etched in a reactive ion etcher using different gas compositions (CH4, H2, CH4+H2, BCl3, BCl3+H2). The influence of gas pressure, composition of mixture and RF power were examined. In BCl3 plasma, etching rate of InP was 10 nm/min, of GaAs about 300 nm/min and of AlGaAs up to 650 nm/min. The increase of the etching rate in BCl3 and H2 mixture is caused by a synergistic effect (not only by superposition of etching rates due to a chemical and physical interaction). Etched surfaces were observed by scanning electron microscope. Measurements by secondary ion mass spectrometry were involved into the discussion of the surface contamination. The BCl3 reactive ion etching process of AIIIBV is applicable for deep mesas in optoelectronics devices.

Ključne riječi

Hrčak ID:

299470

URI

https://hrcak.srce.hr/299470

Datum izdavanja:

2.5.1995.

Podaci na drugim jezicima: hrvatski

Posjeta: 186 *