Izvorni znanstveni članak
Preliminary investigation of Ag/N-Si(111) Schottky photodiode prepared by ionized-cluster-beam deposition
Bruno Cvikl
; Faculty of Civil Engineering, University of Maribor and "J. Stefan'' Institute, University of Ljubljana, Ljubljana, Slovenija
Tomo Mrđen
; Faculty of Civil Engineering, University of Maribor and "J. Stefan'' Institute, University of Ljubljana, Ljubljana, Slovenija
Matjaž Koželj
; Faculty of Civil Engineering, University of Maribor and "J. Stefan'' Institute, University of Ljubljana, Ljubljana, Slovenija
Dean Korošak
; Faculty of Civil Engineering, University of Maribor and "J. Stefan'' Institute, University of Ljubljana, Ljubljana, Slovenija
Sažetak
Photocharacteristics in the visible region of Ag/n-Si(111) Schottky photodiode, prepared by ionized-cluster-beam deposition for Ag+ acceleration voltage equal to zero, have been measured. High quantum efficiency (up to 85%) and responsitivity of 0.35 A/W, when operating in the reversed bias regime, was observed. For low reverse voltages Vr < 1 V, the photocurrent measurements exhibit strong, unusual voltage dependence of the depletion layer width. The I-V data in this regime could be well fitted by an expression proportional to 1-exp(-KVr3), where K is a wavelength dependent constant. No satisfactory explanation of the observations could be presently provided.
Ključne riječi
Hrčak ID:
299495
URI
Datum izdavanja:
2.5.1995.
Posjeta: 141 *