Izvorni znanstveni članak
Selectively etched series of p-n junctions in GaAs
Károly Somogyi
; Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, P.O.B. 76., H-1325 Hungary
Szilárd Varga
; Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, P.O.B. 76., H-1325 Hungary
Chantal Grattepain
; Laboratoire de Physique des Solides of CNRS, Meudon-Bellevue, 92195 Meudon Cedex, 1. Pl. A. Briand, France
László Dobos
; Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, P.O.B. 76., H-1325 Hungary
Sažetak
Simultaneous S and Zn doping was applied to obtain multi-layered vapour phase epitaxial structures of GaAs. SIMS studies have shown that the simultaneous presence of S and Zn in the gas phase does not influence the incorporation of S or of Zn during the growth process. Epitaxial structures with n-p-n-p-n-p-n series of layers have been obtained by variation of S doping at constant Zn partial pressure. The layer thicknesses were 0.3 and 3 mm. SIMS profiles show good abruptness of the junctions, so n-type GaAs lamellae have been obtained by selective electrochemical etching from such layered structures. Results show a possible way for fabrication of micro-machined devices from GaAs.
Ključne riječi
Hrčak ID:
299499
URI
Datum izdavanja:
2.5.1995.
Posjeta: 153 *